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|Title:||Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions||Authors:||Cho, Byung Jin
Kim, Sun Jung
Joo, Moon Sig
Yeo, In Seok
|Issue Date:||1999||Citation:||Cho, Byung Jin,Kim, Sun Jung,Ling, C.H.,Joo, Moon Sig,Yeo, In Seok (1999). Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 30-33. ScholarBank@NUS Repository.||Abstract:||The effect of X-ray radiation on the reliability of ultra-thin gate oxide has been studied under usual X-ray lithography condition. A large increase of leakage current was observed on the oxides irradiated. The current-voltage characteristics of this radiation-induced leakage current (RILC) were found to be very similar to the electrical stress-induced leakage currents (SILC). Both currents comprise a dc component due to trap-assisted tunneling, and a transient component attributed to the tunnel charge/discharging of carriers. A further component, related to the redistribution and trapping of generated holes in the oxide bulk, is observed in the RILC, only for thicker oxides. Therefore, the RILC and the SILC have the same degradation mechanism in ultra-thin oxides of around 45 angstroms or less. An experimental relationship between the total X-ray dose and the equivalent charge fluence that induces the same amount of degradation, has been established. The oxide thickness dependence of the relationship was obtained as well.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/72877|
|Appears in Collections:||Staff Publications|
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