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|Title:||Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias||Authors:||Ang, Chew-Hoe
|Issue Date:||2000||Citation:||Ang, Chew-Hoe,Ling, Chung-Ho,Cheng, Zhi-Yuan,Kim, Sun-Jung,Cho, Byung-Jin (2000). Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias. Japanese Journal of Applied Physics, Part 2: Letters 39 (7) : L757-L759. ScholarBank@NUS Repository.||Abstract:||We have observed that excess low-field leakage currents generated by 10 keV X-ray irradiation in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after irradiation, regardless of the polarity of the applied gate bias. The reduction rate of radiation-induced leakage current (RILC) increased with the applied gate bias and began to saturate after 105s. In addition, the reduction rate of RILC was significantly enhanced in a H2 ambient, suggesting a strong link between the reduction of RILC and trapped-hole annealing.||Source Title:||Japanese Journal of Applied Physics, Part 2: Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81077||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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