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|Title:||Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications||Authors:||Hu, H.
|Issue Date:||1-Jul-2003||Citation:||Hu, H., Zhu, C., Lu, Y.F., Wu, Y.H., Liew, T., Li, M.F., Cho, B.J., Choi, W.K., Yakovlev, N. (2003-07-01). Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications. Journal of Applied Physics 94 (1) : 551-557. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1579550||Abstract:||Thin films of HfO2 high-k dielectric were fabricated using pulsed-laser deposition at various substrate temperatures and pressures. The electrical properties of HfO2 metal-insulator-metal (MIM) capacitors were also investigated at various deposition temperatures. The results show that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82904||ISSN:||00218979||DOI:||10.1063/1.1579550|
|Appears in Collections:||Staff Publications|
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