Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1579550
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dc.titlePhysical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications
dc.contributor.authorHu, H.
dc.contributor.authorZhu, C.
dc.contributor.authorLu, Y.F.
dc.contributor.authorWu, Y.H.
dc.contributor.authorLiew, T.
dc.contributor.authorLi, M.F.
dc.contributor.authorCho, B.J.
dc.contributor.authorChoi, W.K.
dc.contributor.authorYakovlev, N.
dc.date.accessioned2014-10-07T04:34:51Z
dc.date.available2014-10-07T04:34:51Z
dc.date.issued2003-07-01
dc.identifier.citationHu, H., Zhu, C., Lu, Y.F., Wu, Y.H., Liew, T., Li, M.F., Cho, B.J., Choi, W.K., Yakovlev, N. (2003-07-01). Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications. Journal of Applied Physics 94 (1) : 551-557. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1579550
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82904
dc.description.abstractThin films of HfO2 high-k dielectric were fabricated using pulsed-laser deposition at various substrate temperatures and pressures. The electrical properties of HfO2 metal-insulator-metal (MIM) capacitors were also investigated at various deposition temperatures. The results show that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1579550
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1579550
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume94
dc.description.issue1
dc.description.page551-557
dc.description.codenJAPIA
dc.identifier.isiut000183642900077
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