Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1579550

Title:	Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications
Authors:	Hu, H. Zhu, C. Lu, Y.F. Wu, Y.H. Liew, T. Li, M.F. Cho, B.J. Choi, W.K. Yakovlev, N.
Issue Date:	1-Jul-2003
Citation:	Hu, H., Zhu, C., Lu, Y.F., Wu, Y.H., Liew, T., Li, M.F., Cho, B.J., Choi, W.K., Yakovlev, N. (2003-07-01). Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications. Journal of Applied Physics 94 (1) : 551-557. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1579550
Abstract:	Thin films of HfO2 high-k dielectric were fabricated using pulsed-laser deposition at various substrate temperatures and pressures. The electrical properties of HfO2 metal-insulator-metal (MIM) capacitors were also investigated at various deposition temperatures. The results show that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/82904
ISSN:	00218979
DOI:	10.1063/1.1579550
Appears in Collections:	Staff Publications

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