Please use this identifier to cite or link to this item:
Title: PVD HfO2 for high-precision MIM capacitor applications
Authors: Kim, S.J. 
Cho, B.J. 
Li, M.F. 
Yu, X.
Zhu, C. 
Chin, A.
Kwong, D.-L.
Keywords: Capacitance density
Metal-insulator-metal (MIM) capacitor
Voltage coefficient of capacitor (VCC)
Issue Date: Jun-2003
Citation: Kim, S.J., Cho, B.J., Li, M.F., Yu, X., Zhu, C., Chin, A., Kwong, D.-L. (2003-06). PVD HfO2 for high-precision MIM capacitor applications. IEEE Electron Device Letters 24 (6) : 387-389. ScholarBank@NUS Repository.
Abstract: Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10-8 A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2003.813381
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.