Please use this identifier to cite or link to this item:
|Title:||PVD HfO2 for high-precision MIM capacitor applications||Authors:||Kim, S.J.
Metal-insulator-metal (MIM) capacitor
Voltage coefficient of capacitor (VCC)
|Issue Date:||Jun-2003||Citation:||Kim, S.J., Cho, B.J., Li, M.F., Yu, X., Zhu, C., Chin, A., Kwong, D.-L. (2003-06). PVD HfO2 for high-precision MIM capacitor applications. IEEE Electron Device Letters 24 (6) : 387-389. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.813381||Abstract:||Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10-8 A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82950||ISSN:||07413106||DOI:||10.1109/LED.2003.813381|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.