PVD HfO2 for high-precision MIM capacitor applications

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.813381

Title:	PVD HfO2 for high-precision MIM capacitor applications
Authors:	Kim, S.J. Cho, B.J. Li, M.F. Yu, X. Zhu, C. Chin, A. Kwong, D.-L.
Keywords:	Capacitance density HfO2 Metal-insulator-metal (MIM) capacitor Sputter Voltage coefficient of capacitor (VCC)
Issue Date:	Jun-2003
Citation:	Kim, S.J., Cho, B.J., Li, M.F., Yu, X., Zhu, C., Chin, A., Kwong, D.-L. (2003-06). PVD HfO2 for high-precision MIM capacitor applications. IEEE Electron Device Letters 24 (6) : 387-389. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.813381
Abstract:	Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10-8 A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82950
ISSN:	07413106
DOI:	10.1109/LED.2003.813381
Appears in Collections:	Staff Publications

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