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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.813381
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dc.titlePVD HfO2 for high-precision MIM capacitor applications
dc.contributor.authorKim, S.J.
dc.contributor.authorCho, B.J.
dc.contributor.authorLi, M.F.
dc.contributor.authorYu, X.
dc.contributor.authorZhu, C.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:35:26Z
dc.date.available2014-10-07T04:35:26Z
dc.date.issued2003-06
dc.identifier.citationKim, S.J., Cho, B.J., Li, M.F., Yu, X., Zhu, C., Chin, A., Kwong, D.-L. (2003-06). PVD HfO2 for high-precision MIM capacitor applications. IEEE Electron Device Letters 24 (6) : 387-389. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.813381
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82950
dc.description.abstractMetal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/μm2 have been achieved while maintaining the leakage current densities around 1 × 10-8 A/cm2 within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.813381
dc.sourceScopus
dc.subjectCapacitance density
dc.subjectHfO2
dc.subjectMetal-insulator-metal (MIM) capacitor
dc.subjectSputter
dc.subjectVoltage coefficient of capacitor (VCC)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2003.813381
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume24
dc.description.issue6
dc.description.page387-389
dc.description.codenEDLED
dc.identifier.isiut000184254700007
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