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|Title:||Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation||Authors:||Poon, C.H.
|Issue Date:||Mar-2003||Citation:||Poon, C.H.,Cho, B.J.,Lu, Y.F.,Bhat, M.,See, A. (2003-03). Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 706-709. ScholarBank@NUS Repository.||Abstract:||The advantages of multiple-pulse laser annealing with a moderate energy fluence were demonstrated over single-pulse annealing with a high energy fluence on the formation of shallow p+/n junction. It was found that the laser fluence, adjusted to a value that could melt amorphous silicon layer but not crystalline silicon, could maintain the advantage of easy control of junction depth by controlling the preamorphized layer depth. The multiple-pulse laser annealing with a fluence was found to achieve a good degree of activation of boron without compromising the junction depth.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/82734||ISSN:||10711023|
|Appears in Collections:||Staff Publications|
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