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|Title:||Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application||Authors:||Zhang, G.
|Issue Date:||2007||Citation:||Zhang, G., Wan, S.H., Bobade, S.M., Lee, S.-H., Cho, B.-J., Won, J.Y. (2007). Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell application. Technical Digest - International Electron Devices Meeting, IEDM : 83-86. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418869||Abstract:||A novel ZrO2/Si3N4 dual charge storage layer (DCSL) has been proposed for highly reliable multi-level cell (MLC) application. Separated charge storage and step-up potential well have been resulted from the ZrO2/Si3N4 DCSL. Threshold voltage (Vth) levels are controlled by the charge storage capacity of each CSL, instead of the amount of charge injection, making a superior multi-level Vth control possible. Negligible Vth offsets (||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/84026||ISSN:||01631918||DOI:||10.1109/IEDM.2007.4418869|
|Appears in Collections:||Staff Publications|
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