Please use this identifier to cite or link to this item:
|Title:||Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization||Authors:||Cho, B.J.
|Issue Date:||2004||Citation:||Cho, B.J.,Poon, D.,Tan, L.S.,Bhat, M.,See, A. (2004). Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 4 : 22-26. ScholarBank@NUS Repository.||Abstract:||Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.||Source Title:||Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004||URI:||http://scholarbank.nus.edu.sg/handle/10635/71059||ISBN:||7309039157|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 24, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.