Please use this identifier to cite or link to this item:
Title: RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
Authors: Ding, S.-J. 
Hu, H.
Zhu, C. 
Kim, S.J. 
Yu, X.
Li, M.-F. 
Cho, B.J. 
Chan, D.S.H. 
Yu, M.B.
Rustagi, S.C.
Chin, A.
Kwong, D.-L.
Keywords: Atomic layer-deposit (ALD)
HfO2-Al2O3 laminate
Metal-insulator-metal (MIM) capacitor
Radio frequency (RF)
Issue Date: Jun-2004
Citation: Ding, S.-J., Hu, H., Zhu, C., Kim, S.J., Yu, X., Li, M.-F., Cho, B.J., Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Kwong, D.-L. (2004-06). RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications. IEEE Transactions on Electron Devices 51 (6) : 886-894. ScholarBank@NUS Repository.
Abstract: High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/μm2) up to 20 GHz, low leakage current of 4.9 × 10-8 A/cm2 at 2 V and 125°C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (α) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.
Source Title: IEEE Transactions on Electron Devices
ISSN: 00189383
DOI: 10.1109/TED.2004.827367
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.