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|Title:||Reliability of thin gate oxides irradiated under X-ray lithography conditions||Authors:||Cho, B.J.
Radiation-induced leakage current (RILC)
Stress-induced leakage current (SILC)
Ultra-thin gate oxide
|Issue Date:||Apr-2001||Citation:||Cho, B.J.,Kim, S.J.,Ang, C.H.,Ling, C.H.,Joo, M.S.,Yeo, I.S. (2001-04). Reliability of thin gate oxides irradiated under X-ray lithography conditions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (4 B) : 2819-2822. ScholarBank@NUS Repository.||Abstract:||The effect of X-ray lithography (XRL) process on the reliability of thin gate oxide has been investigated. A large increase in the low-field excess leakage current was observed on irradiated oxides, which was very similar to the electrical stress-induced leakage currents. However, it has been found that the long-term reliability of ultra-thin gate oxide is not affected by XRL process. The excess leakage current could be eliminated by thermal annealing at 400°C and above and no residual damages in the oxide were observed after the annealing.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/57246||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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