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|Title:||A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectrics||Authors:||Ding, S.-J.
|Issue Date:||2004||Citation:||Ding, S.-J.,Hu, H.,Zhu, C.,Kim, S.J.,Li, M.F.,Cho, B.J.,Chin, A.,Kwong, D.-L. (2004). A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectrics. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 403-406. ScholarBank@NUS Repository.||Abstract:||The HfO 2-Al 2O 3 laminate MIM capacitor exhibits superior performances to the stack and sandwich counterparts, including the smallest linear voltage coefficient of capacitance (β) and leakage current, the highest breakdown voltage, the longest time-to-breakdown as well as the most stable quadratic voltage coefficient of capacitance (a) and capacitance under CVS due to weak electron trapping. The underlying mechanism is likely attributed to the alternate insertions of Al 2O 3 into the bulk HfO 2, thereby preventing crystallization of HfO 2 film. © 2004 IEEE.||Source Title:||International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT||URI:||http://scholarbank.nus.edu.sg/handle/10635/83342|
|Appears in Collections:||Staff Publications|
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