Full Name
HE YANDONG
Variants
He, Y.
He, Y.D.
 
 
 

Publications

Results 1-11 of 11 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12000A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stressGuan, H.; Xu, Z.; Cho, B.J. ; Li, M.F. ; He, Y.D. 
2Aug-2000A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET'sGuan, H.; Li, M.-F. ; He, Y. ; Cho, B.J. ; Dong, Z.
31999Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV methodNg, K.H.; Jie, B.B.; He, Y.D. ; Chim, W.K. ; Li, M.F. ; Lo, K.F.
418-Oct-1999Conduction mechanism under quasibreakdown of ultrathin gate oxideHe, Y.D. ; Guan, H.; Li, M.F. ; Cho, B.J. ; Dong, Z.
5May-2001Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxideGuan, H.; Cho, B.J. ; Li, M.F. ; Xu, Z.; He, Y.D. ; Dong, Z.
62000Investigation of quasi-breakdown mechanism in ultra-thin gate oxidesGuan, H.; He, Y.D. ; Li, M.F. ; Cho, B.J. ; Dong, Z.
7May-1999Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxidesGuan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W.
8May-1999Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxidesGuan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W.
9Nov-1999Role of hole fluence in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z.
102000Roles of primary hot hole and FN electron fluences in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.J. ; Lo, K.F.
111999Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV techniqueGuan, Hao; Cho, Byung Jin ; Li, M.F. ; He, Y.D. ; Xu, Zhen; Dong, Zhong