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|Title:||Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation||Authors:||Loh, W.Y.
|Issue Date:||2003||Citation:||Loh, W.Y.,Cho, B.C.,Joo, M.S.,Li, M.F.,Chan, D.S.H.,Mathew, S.,Kwong, D.-L. (2003). Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation. Technical Digest - International Electron Devices Meeting : 927-930. ScholarBank@NUS Repository.||Abstract:||Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated. The results correlate with the statistical Weibull's distribution showing a polarity dependence breakdown in high-K stacks. A model of charge trapping at different spatial locations in HfAlO x with TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.||Source Title:||Technical Digest - International Electron Devices Meeting||URI:||http://scholarbank.nus.edu.sg/handle/10635/83486||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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