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https://doi.org/10.1109/LED.2004.824249
Title: | Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates | Authors: | Yu, D.S. Huang, C.H. Chin, A. Zhu, C. Li, M.F. Cho, B.J. Kwong, D.-L. |
Keywords: | Ge Ge-on-insulator (GOI) MOSFET NiGe NiSi |
Issue Date: | Mar-2004 | Citation: | Yu, D.S., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Cho, B.J., Kwong, D.-L. (2004-03). Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates. IEEE Electron Device Letters 25 (3) : 138-140. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.824249 | Abstract: | High-κ Al 2O 3/Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 2O 3-GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al 2O 3-Si MOSFETs. Additionally, A1 2O 3-GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al 2O 3-Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/81942 | ISSN: | 07413106 | DOI: | 10.1109/LED.2004.824249 |
Appears in Collections: | Staff Publications |
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