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|Title:||Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates||Authors:||Yu, D.S.
|Issue Date:||Mar-2004||Citation:||Yu, D.S., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Cho, B.J., Kwong, D.-L. (2004-03). Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates. IEEE Electron Device Letters 25 (3) : 138-140. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.824249||Abstract:||High-κ Al 2O 3/Ge-on-insulator (GOI) n- and p-MOSFETs with fully silicided NiSi and germanided NiGe dual gates were fabricated. At 1.7-nm equivalent-oxide-thickness (EOT), the A1 2O 3-GOI with metal-like NiSi and NiGe gates has comparable gate leakage current with Al 2O 3-Si MOSFETs. Additionally, A1 2O 3-GOI C-MOSFETs with fully NiSi and NiGe gates show 1.94 and 1.98 times higher electron and hole mobility, respectively, than Al 2O 3-Si devices, because the electron and hole effective masses of Ge are lower than those of Si. The process with maximum 500°C rapid thermal annealing (RTA) is ideal for integrating metallic gates with high-κ to minimize interfacial reactions and crystallization of the high-κ material, and oxygen penetration in high-κ MOSFETs.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81942||ISSN:||07413106||DOI:||10.1109/LED.2004.824249|
|Appears in Collections:||Staff Publications|
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