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|Title:||Annealing behavior of gate oxide leakage current after quasi-breakdown||Authors:||Xu, Z.
|Issue Date:||2000||Citation:||Xu, Z.,Cho, B.J.,Li, M.F. (2000). Annealing behavior of gate oxide leakage current after quasi-breakdown. Microelectronics Reliability 40 (8-10) : 1341-1346. ScholarBank@NUS Repository.||Abstract:||Annealing behavior of thin gate oxide after quasi-breakdown (QB) has been investigated. The result implies that the QB leakage current is consisted of two components: the enhanced tunneling due to locally thinned oxide at interface-damaged region and the conduction through a shortening path. The change of leakage current during annealing is a competitive process of changes of these two components - the recovery of interface damage and the expansion of the shortening path in bulk oxide. A unified model is proposed to explain the mechanism of conduction in QB. © 2000 Elsevier Science Ltd. All rights reserved.||Source Title:||Microelectronics Reliability||URI:||http://scholarbank.nus.edu.sg/handle/10635/61845||ISSN:||00262714|
|Appears in Collections:||Staff Publications|
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