Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/61845
Title: Annealing behavior of gate oxide leakage current after quasi-breakdown
Authors: Xu, Z.
Cho, B.J. 
Li, M.F. 
Issue Date: 2000
Source: Xu, Z.,Cho, B.J.,Li, M.F. (2000). Annealing behavior of gate oxide leakage current after quasi-breakdown. Microelectronics Reliability 40 (8-10) : 1341-1346. ScholarBank@NUS Repository.
Abstract: Annealing behavior of thin gate oxide after quasi-breakdown (QB) has been investigated. The result implies that the QB leakage current is consisted of two components: the enhanced tunneling due to locally thinned oxide at interface-damaged region and the conduction through a shortening path. The change of leakage current during annealing is a competitive process of changes of these two components - the recovery of interface damage and the expansion of the shortening path in bulk oxide. A unified model is proposed to explain the mechanism of conduction in QB. © 2000 Elsevier Science Ltd. All rights reserved.
Source Title: Microelectronics Reliability
URI: http://scholarbank.nus.edu.sg/handle/10635/61845
ISSN: 00262714
Appears in Collections:Staff Publications

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