A high performance MIM capacitor using HfO 2 dielectrics

Abstract

Metal-insulator-metal (MIM) capacitors with a 56-nm4hick HfO 2 high-κ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (∼200 °C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO 2 MIM capacitor can provide a higher capacitance density than Si 3N 4 MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 × 10 -9 A/cm 2 at 3 V is achieved. All of these make the HfO 2 MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.