Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2002.802602
Title: A high performance MIM capacitor using HfO 2 dielectrics
Authors: Hu, H.
Zhu, C. 
Lu, Y.F. 
Li, M.F. 
Cho, B.J. 
Choi, W.K. 
Keywords: High-κ
MIM capacitor
Temperature coefficient
Thin-film devices
Voltage linearity
Issue Date: Sep-2002
Citation: Hu, H., Zhu, C., Lu, Y.F., Li, M.F., Cho, B.J., Choi, W.K. (2002-09). A high performance MIM capacitor using HfO 2 dielectrics. IEEE Electron Device Letters 23 (9) : 514-516. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.802602
Abstract: Metal-insulator-metal (MIM) capacitors with a 56-nm4hick HfO 2 high-κ dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (∼200 °C). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO 2 MIM capacitor can provide a higher capacitance density than Si 3N 4 MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 × 10 -9 A/cm 2 at 3 V is achieved. All of these make the HfO 2 MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81872
ISSN: 07413106
DOI: 10.1109/LED.2002.802602
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