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Title: A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs
Authors: Huang, D.
Liu, W.J.
Liu, Z.Y.
Liao, C.C.
Zhang, L.-F.
Gan, Z.
Wong, W.
Li, M.-F. 
Keywords: Charge pumping (CP)
Interface traps
Negative-bias temperature instability (NBTI)
Reaction-diffusion model
Issue Date: 2009
Citation: Huang, D., Liu, W.J., Liu, Z.Y., Liao, C.C., Zhang, L.-F., Gan, Z., Wong, W., Li, M.-F. (2009). A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs. IEEE Transactions on Electron Devices 56 (2) : 267-274. ScholarBank@NUS Repository.
Abstract: A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (∼ tn of interface-trap generation is observed. The index n is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
ISSN: 00189383
DOI: 10.1109/TED.2008.2010585
Appears in Collections:Staff Publications

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