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|Title:||A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs||Authors:||Huang, D.
|Keywords:||Charge pumping (CP)
Negative-bias temperature instability (NBTI)
|Issue Date:||2009||Citation:||Huang, D., Liu, W.J., Liu, Z.Y., Liao, C.C., Zhang, L.-F., Gan, Z., Wong, W., Li, M.-F. (2009). A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs. IEEE Transactions on Electron Devices 56 (2) : 267-274. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2010585||Abstract:||A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (∼ tn of interface-trap generation is observed. The index n is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics. © 2009 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/81883||ISSN:||00189383||DOI:||10.1109/TED.2008.2010585|
|Appears in Collections:||Staff Publications|
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