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|Title:||A novel program-erasable high-κ AlN capacitor with memory function||Authors:||Chin, A.
High dielectric constant (high κ)
|Issue Date:||2004||Citation:||Chin, A.,Lai, C.H.,Hung, B.F.,Cheng, C.F.,McAlister, S.P.,Zhu, C.,Li, M.-F.,Kwong, D.-L. (2004). A novel program-erasable high-κ AlN capacitor with memory function. Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004 : 18-23. ScholarBank@NUS Repository.||Abstract:||We demonstrate, for the first time, a novel high-kκ AlN capacitor that is program-erasable at voltages of +4 or -4 V and that has good retention for 1T1C memory. These features are not shown by Al 2O 3, or other capacitors that use only a single high-κ dielectric layer. Good data retention is shown with a threshold shift of only 0.06V after +± 4V program/erase for 10 4 sec. ©2004 IEEE.||Source Title:||Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004||URI:||http://scholarbank.nus.edu.sg/handle/10635/83404||ISBN:||0780387260|
|Appears in Collections:||Staff Publications|
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