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https://scholarbank.nus.edu.sg/handle/10635/83404
DC Field | Value | |
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dc.title | A novel program-erasable high-κ AlN capacitor with memory function | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Lai, C.H. | |
dc.contributor.author | Hung, B.F. | |
dc.contributor.author | Cheng, C.F. | |
dc.contributor.author | McAlister, S.P. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:40:51Z | |
dc.date.available | 2014-10-07T04:40:51Z | |
dc.date.issued | 2004 | |
dc.identifier.citation | Chin, A.,Lai, C.H.,Hung, B.F.,Cheng, C.F.,McAlister, S.P.,Zhu, C.,Li, M.-F.,Kwong, D.-L. (2004). A novel program-erasable high-κ AlN capacitor with memory function. Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004 : 18-23. ScholarBank@NUS Repository. | |
dc.identifier.isbn | 0780387260 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83404 | |
dc.description.abstract | We demonstrate, for the first time, a novel high-kκ AlN capacitor that is program-erasable at voltages of +4 or -4 V and that has good retention for 1T1C memory. These features are not shown by Al 2O 3, or other capacitors that use only a single high-κ dielectric layer. Good data retention is shown with a threshold shift of only 0.06V after +± 4V program/erase for 10 4 sec. ©2004 IEEE. | |
dc.source | Scopus | |
dc.subject | Aln | |
dc.subject | Erase | |
dc.subject | High dielectric constant (high κ) | |
dc.subject | Memory | |
dc.subject | Program | |
dc.subject | Retention | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004 | |
dc.description.page | 18-23 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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