Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83404
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dc.titleA novel program-erasable high-κ AlN capacitor with memory function
dc.contributor.authorChin, A.
dc.contributor.authorLai, C.H.
dc.contributor.authorHung, B.F.
dc.contributor.authorCheng, C.F.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.-F.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:40:51Z
dc.date.available2014-10-07T04:40:51Z
dc.date.issued2004
dc.identifier.citationChin, A.,Lai, C.H.,Hung, B.F.,Cheng, C.F.,McAlister, S.P.,Zhu, C.,Li, M.-F.,Kwong, D.-L. (2004). A novel program-erasable high-κ AlN capacitor with memory function. Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004 : 18-23. ScholarBank@NUS Repository.
dc.identifier.isbn0780387260
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83404
dc.description.abstractWe demonstrate, for the first time, a novel high-kκ AlN capacitor that is program-erasable at voltages of +4 or -4 V and that has good retention for 1T1C memory. These features are not shown by Al 2O 3, or other capacitors that use only a single high-κ dielectric layer. Good data retention is shown with a threshold shift of only 0.06V after +± 4V program/erase for 10 4 sec. ©2004 IEEE.
dc.sourceScopus
dc.subjectAln
dc.subjectErase
dc.subjectHigh dielectric constant (high κ)
dc.subjectMemory
dc.subjectProgram
dc.subjectRetention
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
dc.description.page18-23
dc.identifier.isiutNOT_IN_WOS
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