A novel program-erasable high-k AlN-Si MIS capacitor

Abstract

We demonstrate a programmable-erasable MIS capacitor with a single layer high-κ AlN dielectric on Si having a high capacitance density of ∼ 5 fF/μm2. It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AN, or other known high-κ dielectric capacitors, where the threshold voltage (Vth) shifts continuously with voltage. This device exhibits good data retention with a Vth change of only 0.06 V after 10 000 s. © 2005 IEEE.