Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2004.842100
| Title: | A novel program-erasable high-k AlN-Si MIS capacitor | Authors: | Lai, C.H. Chin, A. Hung, B.F. Cheng, C.F. Yoo, W.J. Li, M.F. Zhu, C. McAlister, S.P. Kwong, D.-L. |
Keywords: | Capacitor Erase High-k Program |
Issue Date: | Mar-2005 | Citation: | Lai, C.H., Chin, A., Hung, B.F., Cheng, C.F., Yoo, W.J., Li, M.F., Zhu, C., McAlister, S.P., Kwong, D.-L. (2005-03). A novel program-erasable high-k AlN-Si MIS capacitor. IEEE Electron Device Letters 26 (3) : 148-150. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.842100 | Abstract: | We demonstrate a programmable-erasable MIS capacitor with a single layer high-κ AlN dielectric on Si having a high capacitance density of ∼ 5 fF/μm2. It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AN, or other known high-κ dielectric capacitors, where the threshold voltage (Vth) shifts continuously with voltage. This device exhibits good data retention with a Vth change of only 0.06 V after 10 000 s. © 2005 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/81898 | ISSN: | 07413106 | DOI: | 10.1109/LED.2004.842100 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
14
checked on Jun 13, 2019
WEB OF SCIENCETM
Citations
13
checked on Jun 13, 2019
Page view(s)
69
checked on May 25, 2019
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.