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Title: A novel program-erasable high-k AlN-Si MIS capacitor
Authors: Lai, C.H.
Chin, A.
Hung, B.F.
Cheng, C.F.
Yoo, W.J. 
Li, M.F. 
Zhu, C. 
McAlister, S.P.
Kwong, D.-L.
Keywords: Capacitor
Issue Date: Mar-2005
Citation: Lai, C.H., Chin, A., Hung, B.F., Cheng, C.F., Yoo, W.J., Li, M.F., Zhu, C., McAlister, S.P., Kwong, D.-L. (2005-03). A novel program-erasable high-k AlN-Si MIS capacitor. IEEE Electron Device Letters 26 (3) : 148-150. ScholarBank@NUS Repository.
Abstract: We demonstrate a programmable-erasable MIS capacitor with a single layer high-κ AlN dielectric on Si having a high capacitance density of ∼ 5 fF/μm2. It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AN, or other known high-κ dielectric capacitors, where the threshold voltage (Vth) shifts continuously with voltage. This device exhibits good data retention with a Vth change of only 0.06 V after 10 000 s. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2004.842100
Appears in Collections:Staff Publications

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