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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.842100
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dc.titleA novel program-erasable high-k AlN-Si MIS capacitor
dc.contributor.authorLai, C.H.
dc.contributor.authorChin, A.
dc.contributor.authorHung, B.F.
dc.contributor.authorCheng, C.F.
dc.contributor.authorYoo, W.J.
dc.contributor.authorLi, M.F.
dc.contributor.authorZhu, C.
dc.contributor.authorMcAlister, S.P.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:23:00Z
dc.date.available2014-10-07T04:23:00Z
dc.date.issued2005-03
dc.identifier.citationLai, C.H., Chin, A., Hung, B.F., Cheng, C.F., Yoo, W.J., Li, M.F., Zhu, C., McAlister, S.P., Kwong, D.-L. (2005-03). A novel program-erasable high-k AlN-Si MIS capacitor. IEEE Electron Device Letters 26 (3) : 148-150. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.842100
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81898
dc.description.abstractWe demonstrate a programmable-erasable MIS capacitor with a single layer high-κ AlN dielectric on Si having a high capacitance density of ∼ 5 fF/μm2. It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AN, or other known high-κ dielectric capacitors, where the threshold voltage (Vth) shifts continuously with voltage. This device exhibits good data retention with a Vth change of only 0.06 V after 10 000 s. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.842100
dc.sourceScopus
dc.subjectCapacitor
dc.subjectErase
dc.subjectHigh-k
dc.subjectProgram
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.842100
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue3
dc.description.page148-150
dc.description.codenEDLED
dc.identifier.isiut000227262500008
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