A novel program-erasable high-k AlN-Si MIS capacitor

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.842100

Title:	A novel program-erasable high-k AlN-Si MIS capacitor
Authors:	Lai, C.H. Chin, A. Hung, B.F. Cheng, C.F. Yoo, W.J. Li, M.F. Zhu, C. McAlister, S.P. Kwong, D.-L.
Keywords:	Capacitor Erase High-k Program
Issue Date:	Mar-2005
Citation:	Lai, C.H., Chin, A., Hung, B.F., Cheng, C.F., Yoo, W.J., Li, M.F., Zhu, C., McAlister, S.P., Kwong, D.-L. (2005-03). A novel program-erasable high-k AlN-Si MIS capacitor. IEEE Electron Device Letters 26 (3) : 148-150. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.842100
Abstract:	We demonstrate a programmable-erasable MIS capacitor with a single layer high-κ AlN dielectric on Si having a high capacitance density of ∼ 5 fF/μm2. It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AN, or other known high-κ dielectric capacitors, where the threshold voltage (Vth) shifts continuously with voltage. This device exhibits good data retention with a Vth change of only 0.06 V after 10 000 s. © 2005 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81898
ISSN:	07413106
DOI:	10.1109/LED.2004.842100
Appears in Collections:	Staff Publications

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