Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2005.861025
| Title: | A fast measurement technique of MOSFET Id-Vg characteristics | Authors: | Shen, C. Li, M.-F. Wang, X.P. Yeo, Y.-C. Kwong, D.-L. |
Keywords: | CMOSFETs Reliability Semiconductor device measurements Trapping |
Issue Date: | Jan-2006 | Citation: | Shen, C., Li, M.-F., Wang, X.P., Yeo, Y.-C., Kwong, D.-L. (2006-01). A fast measurement technique of MOSFET Id-Vg characteristics. IEEE Electron Device Letters 27 (1) : 55-57. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.861025 | Abstract: | In this letter, we developed an improved ultrafast measurement method for threshold voltage Vth measurement of MOSFETs. We demonstrate Id-Vg curve measurement within 1 μs to extract the threshold voltage of MOSFET. Errors arising from MOSFET parasitics and measurement setup are analyzed quantatatively. The ultrafast Vth measurement is highly needed in the investigation of gate dielectric charge trapping effect when traps with short detrapping time constants are present. Application in charge trapping measurement on HfO2 gate dielectric is demonstrated. © 2005 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/81867 | ISSN: | 07413106 | DOI: | 10.1109/LED.2005.861025 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
70
checked on Feb 26, 2021
WEB OF SCIENCETM
Citations
59
checked on Feb 26, 2021
Page view(s)
224
checked on Mar 1, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.