Please use this identifier to cite or link to this item:
|Title:||A fast measurement technique of MOSFET Id-Vg characteristics||Authors:||Shen, C.
Semiconductor device measurements
|Issue Date:||Jan-2006||Citation:||Shen, C., Li, M.-F., Wang, X.P., Yeo, Y.-C., Kwong, D.-L. (2006-01). A fast measurement technique of MOSFET Id-Vg characteristics. IEEE Electron Device Letters 27 (1) : 55-57. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.861025||Abstract:||In this letter, we developed an improved ultrafast measurement method for threshold voltage Vth measurement of MOSFETs. We demonstrate Id-Vg curve measurement within 1 μs to extract the threshold voltage of MOSFET. Errors arising from MOSFET parasitics and measurement setup are analyzed quantatatively. The ultrafast Vth measurement is highly needed in the investigation of gate dielectric charge trapping effect when traps with short detrapping time constants are present. Application in charge trapping measurement on HfO2 gate dielectric is demonstrated. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81867||ISSN:||07413106||DOI:||10.1109/LED.2005.861025|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 13, 2019
WEB OF SCIENCETM
checked on Aug 6, 2019
checked on Aug 17, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.