1. ScholarBank@NUS

Chunxiang Zhu

rp01634

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 141-160 of 218 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
1412006Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communicationsDing, S.-J.; Huang, Y.-J.; Li, Y.; Zhang, D.W.; Zhu, C. ; Li, M.-F. 
142Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
1432003Microwave coplanar filters on Si substratesChan, K.T.; Chin, A.; Kuo, J.T.; Chang, C.Y.; Duh, D.S.; Lin, W.J.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
144Feb-2003MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectricsHu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
1452003MIM capacitors with HfO2 and HfAlOx for Si RF and analog applicationsYu, X.; Zhu, C. ; Hu, H.; Chin, A.; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
146Jul-2004Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectricYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Yu, M.B.; Du, A.Y.; Kwong, D.-L.
147Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
148Dec-2011Modeling the negative quadratic VCC of SiO2 in MIM capacitorPhung, T.H.; Steinmann, P.; Wise, R.; Yeo, Y.-C. ; Zhu, C. 
1492008Molecular conformation-dependent memory effects in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Eric Teo, Y.H. ; Zhu, C.X. ; Daniel Chan, S.H. ; Kang, E.T. ; Neon, K.G. 
150Aug-2004N-type Schottky barrier source/drain MOSFET using Ytterbium silicideZhu, S. ; Chen, J. ; Li, M.-F. ; Lee, S.J. ; Singh, J.; Zhu, C.X. ; Du, A.; Tung, C.H.; Chin, A.; Kwong, D.L.
1512004Narrow-band band-pass filters on silicon substrates at 30 GHzYu, D.S.; Cheng, C.F.; Chan, K.T.; Chin, A.; McAlister, S.P.; Zhu, C. ; Li, M.F. ; Kwong, D.L.
1522005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
15323-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
154Jun-2006Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groupsTeo, E.Y.H. ; Ling, Q.D. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
15515-Jul-2022Nonvolatile logic‐in‐memory computing based on solution‐processed CuI memristorBochang Li ; Wei Wei ; Li Luo; Ming Gao ; Zhi Gen Yu; Sifan Li ; Kah Wee Ang ; Chunxiang Zhu 
1562-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
1575-Sep-2011Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole unitsZhang, B.; Liu, Y.-L.; Chen, Y.; Neoh, K.-G. ; Li, Y.-X.; Zhu, C.-X. ; Tok, E.-S. ; Kang, E.-T. 
1582007On the electrical stress-induced oxide-trapped charges in thin Hf O2 Si O2 gate dielectric stackSamanta, P.; Zhu, C. ; Chan, M.
159Feb-2010Origin of different dependences of open-circuit voltage on the electrodes in layered and bulk heterojunction organic photovoltaic cellsZhang, C. ; Tong, S.-W. ; Jiang, C.-Y.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
202010Palladium-induced crystallization of germanium with varied palladium thicknessesPhung, T.H.; Zhu, C.