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https://doi.org/10.1109/LED.2005.854378
Title: | Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers | Authors: | Kim, S.-J. Cho, B.J. Yu, M.B. Li, M.-F. Xiong, Y.-Z. Zhu, C. Chin, A. Kwong, D.-L. |
Keywords: | Bypass capacitor Decoupling capacitor High-κ dielectric Metal-insulator-metal (MIM) capacitor Niobium oxide (Nb2O5) Radio frequency integrated circuit (RF IC) |
Issue Date: | Sep-2005 | Citation: | Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L. (2005-09). Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers. IEEE Electron Device Letters 26 (9) : 625-627. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.854378 | Abstract: | A high capacitance density (Cdensity) metal-insulator-metal MIM) capacitor with niobium pentoxide (Nb2O5) whose κ value is higher than 40, is developed for integrated RF bypass or decoupling capacitor application. Nb2O5 MIM with HfO2/Al2O3 barriers delivers a high Cdensity of > 17 fF/μm2 with excellent RF properties, while maintaining comparable leakage current and reliability properties with other high-κ dielectrics. The capacitance from the dielectric is shown to be stable up to 20 GHz, and resonant frequency of 4.2 GHz and Q of 50 (at 1 GHz) is demonstrated when the capacitor is integrated using Cu-BEOL process. © 2005 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82686 | ISSN: | 07413106 | DOI: | 10.1109/LED.2005.854378 |
Appears in Collections: | Staff Publications |
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