Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.854378
Title: Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers
Authors: Kim, S.-J. 
Cho, B.J. 
Yu, M.B.
Li, M.-F. 
Xiong, Y.-Z.
Zhu, C. 
Chin, A. 
Kwong, D.-L.
Keywords: Bypass capacitor
Decoupling capacitor
High-κ dielectric
Metal-insulator-metal (MIM) capacitor
Niobium oxide (Nb2O5)
Radio frequency integrated circuit (RF IC)
Issue Date: Sep-2005
Citation: Kim, S.-J., Cho, B.J., Yu, M.B., Li, M.-F., Xiong, Y.-Z., Zhu, C., Chin, A., Kwong, D.-L. (2005-09). Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers. IEEE Electron Device Letters 26 (9) : 625-627. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.854378
Abstract: A high capacitance density (Cdensity) metal-insulator-metal MIM) capacitor with niobium pentoxide (Nb2O5) whose κ value is higher than 40, is developed for integrated RF bypass or decoupling capacitor application. Nb2O5 MIM with HfO2/Al2O3 barriers delivers a high Cdensity of > 17 fF/μm2 with excellent RF properties, while maintaining comparable leakage current and reliability properties with other high-κ dielectrics. The capacitance from the dielectric is shown to be stable up to 20 GHz, and resonant frequency of 4.2 GHz and Q of 50 (at 1 GHz) is demonstrated when the capacitor is integrated using Cu-BEOL process. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82686
ISSN: 07413106
DOI: 10.1109/LED.2005.854378
Appears in Collections:Staff Publications

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