Please use this identifier to cite or link to this item:
|Title:||Palladium-induced crystallization of germanium with varied palladium thicknesses||Authors:||Phung, T.H.
|Issue Date:||2010||Citation:||Phung, T.H., Zhu, C. (2010). Palladium-induced crystallization of germanium with varied palladium thicknesses. Journal of the Electrochemical Society 157 (7) : H755-H758. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3428666||Abstract:||Palladium-induced crystallization of germanium at 350°C using different Pd thicknesses is carried out and the qualities of the poly-Ge films obtained are characterized. The crystal qualities of the Ge films are highly dependent on the thickness of Pd used, in which 55 Å is the optimal thickness to induce crystallization of a 418 nm thick Ge film. When a Pd layer thicker than 55 Å is used, it not only deteriorates the crystal quality of Ge but also increases the concentrations of PdGe and Pd2 Ge in the Ge layer. The sheet resistance of the poly-Ge film decreases with increasing crystalline fraction when the Pd layer is thinner than 70 Å because the amount of Pd germanides is low, and the opposite trend is observed when the Pd layer is thicker than 70 Å due to the high concentration of Pd germanides in the film. The complex dielectric constants 〈 ε2 〉 of the poly-Ge films show not only the transition energy E1 and E 1 + Δ1 peaks but also two other peaks at photon energies of 1.6 and 1.8 eV, which possibly are due to the presence of Pd germanides in the Ge layer. © 2010 The Electrochemical Society.||Source Title:||Journal of the Electrochemical Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/82860||ISSN:||00134651||DOI:||10.1149/1.3428666|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 13, 2021
WEB OF SCIENCETM
checked on Jan 6, 2021
checked on Jan 10, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.