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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 101-120 of 231 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
1012003HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC ApplicationsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. 
1022005High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applicationsKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
1032006High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3Ding, S.-J.; Zhang, M.; Chen, W.; Zhang, D.W.; Wang, L.-K.; Wang, X.P.; Zhu, C. ; Li, M.-F. 
1042003High density RF MIM capacitors using high-κ AlTaOx dielectricsHuang, C.H.; Yang, M.Y.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
1052004High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectricYu, X.; Zhu, C. ; Wang, X.P.; Li, M.F. ; Chin, A.; Du, A.Y.; Wang, W.D.; Kwong, D.-L.
1062008High mobility high-k/Ge pMOSFETs with 1 nm EOT-new concept on interface engineering and interface characterizationXie, R.; Phung, T.H.; He, W. ; Sun, Z.; Yu, M.; Cheng, Z.; Zhu, C. 
1072003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
1082007High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal processZhang, Q.C.; Huang, J.D.; Wu, N.; Chen, G.X. ; Hong, M.H. ; Bera, L.K.; Zhu, C. 
1092004High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technologyChin, A.; Kao, H.L.; Yu, D.S.; Liao, C.C.; Zhu, C. ; Li, M.-F. ; Zhu, S. ; Kwong, D.-L.
1102011High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applicationsPhung, T.H.; Srinivasan, D.K.; Steinmann, P.; Wise, R.; Yu, M.-B.; Yeo, Y.-C. ; Zhu, C. 
1112006High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Chen, W.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
112Feb-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, C.H.; Yu, D.S.; Chin, A.; Wang, S.J.; Li, M.-F. ; Zhu, C. ; Hung, B.F.; McAlister, S.P.
1132008High- k gate stack on germanium substrate with fluorine incorporationXie, R.; Yu, M.; Lai, M.Y.; Chan, L.; Zhu, C. 
114May-2003High-density MIM capacitors using AlTaOx dielectricsYang, M.Y.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
1152007High-k gate stack formation on strained SiGe substrate for MOSFET applicationsZhu, C. ; Li, M.F. ; Huang, J.; Fu, J.
1162004HiGH-kappa; MIM capacitors with atomic-layer-deposited HfO 2-Al2O3 laminated and sandwiched dielectrics for analog circuit applicationsDing, S.-J. ; Zhu, C. ; Li, M.-F. ; Cho, B.J. ; Kwong, D.-L.
117Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
118Apr-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gateWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Yen, F.Y.; Hou, Y.T.; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
1192007Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instabilityYu, X.; Zhu, C. ; Yu, M.
1202004Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETsLow, T.; Li, M.F. ; Fan, W.J.; Ng, S.T.; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Chan, L.; Kwong, D.L.