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|Title:||High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric||Authors:||Yu, X.
|Issue Date:||2004||Citation:||Yu, X.,Zhu, C.,Wang, X.P.,Li, M.F.,Chin, A.,Du, A.Y.,Wang, W.D.,Kwong, D.-L. (2004). High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric. Digest of Technical Papers - Symposium on VLSI Technology : 110-111. ScholarBank@NUS Repository.||Abstract:||In this work, we developed a novel Hf-based gate dielectric for MOSFETs with TaN metal gate. By incorporating Ta into HfO 2 films, significant improvements were achieved in contrast to pure HfO 2: (1) the dielectric crystallization temperature is increased up to 1000°C; (2) interface states density (D it) is reduced by one order of magnitude; (3) electron peak mobility is enhanced by more than two times; (4) charge trapping and threshold voltage shift is reduced by 20 times, greatly prolonging the device lifetime; (5) negligible sub-threshold swing and G m variations under constant voltage stress (CVS).||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83780||ISSN:||07431562|
|Appears in Collections:||Staff Publications|
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