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|Title:||High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology||Authors:||Chin, A.
|Issue Date:||2004||Citation:||Chin, A.,Kao, H.L.,Yu, D.S.,Liao, C.C.,Zhu, C.,Li, M.-F.,Zhu, S.,Kwong, D.-L. (2004). High performance metal-gate/high-κ MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 302-305. ScholarBank@NUS Repository.||Abstract:||We propose and demonstrate a new VLSI structure using high performance metal-gate/high-κ MOSFETs and high-Q RF passive devices on Ge-on- Insulator (GOI) platform. In additional to high RF performance passive devices on insulating Si formed by ion implantation, the metal-gate/(La)AlO 3/GOI MOSFETs have 1.7-2.0X improved electron and hole mobility with the merits of minimizing interfacial reaction, high-κ crystallization, Fermi-level pinning, and impurity diffusion due to low thermal budget of 500°C RTA. © 2004 IEEE.||Source Title:||International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT||URI:||http://scholarbank.nus.edu.sg/handle/10635/83785|
|Appears in Collections:||Staff Publications|
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