High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.892367

Title:	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
Authors:	Wu, C.H. Hung, B.F. Chin, A. Wang, S.J. Wang, X.P. Li, M.-F. Zhu, C. Yen, F.Y. Hou, Y.T. Jin, Y. Tao, H.J. Chen, S.C. Liang, M.S.
Keywords:	HfLaON Ir3Si MOSFET Work function
Issue Date:	Apr-2007
Citation:	Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S. (2007-04). High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate. IEEE Electron Device Letters 28 (4) : 292-294. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.892367
Abstract:	We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines. © 2007 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82470
ISSN:	07413106
DOI:	10.1109/LED.2007.892367
Appears in Collections:	Staff Publications

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