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|Title:||High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate||Authors:||Wu, C.H.
|Issue Date:||Apr-2007||Citation:||Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S. (2007-04). High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate. IEEE Electron Device Letters 28 (4) : 292-294. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.892367||Abstract:||We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines. © 2007 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82470||ISSN:||07413106||DOI:||10.1109/LED.2007.892367|
|Appears in Collections:||Staff Publications|
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