Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.892367
Title: High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
Authors: Wu, C.H.
Hung, B.F.
Chin, A.
Wang, S.J.
Wang, X.P.
Li, M.-F. 
Zhu, C. 
Yen, F.Y.
Hou, Y.T.
Jin, Y.
Tao, H.J.
Chen, S.C.
Liang, M.S.
Keywords: HfLaON
Ir3Si
MOSFET
Work function
Issue Date: Apr-2007
Citation: Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S. (2007-04). High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate. IEEE Electron Device Letters 28 (4) : 292-294. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.892367
Abstract: We report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82470
ISSN: 07413106
DOI: 10.1109/LED.2007.892367
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