Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.892367
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dc.titleHigh-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate
dc.contributor.authorWu, C.H.
dc.contributor.authorHung, B.F.
dc.contributor.authorChin, A.
dc.contributor.authorWang, S.J.
dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.-F.
dc.contributor.authorZhu, C.
dc.contributor.authorYen, F.Y.
dc.contributor.authorHou, Y.T.
dc.contributor.authorJin, Y.
dc.contributor.authorTao, H.J.
dc.contributor.authorChen, S.C.
dc.contributor.authorLiang, M.S.
dc.date.accessioned2014-10-07T04:29:47Z
dc.date.available2014-10-07T04:29:47Z
dc.date.issued2007-04
dc.identifier.citationWu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S. (2007-04). High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gate. IEEE Electron Device Letters 28 (4) : 292-294. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.892367
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82470
dc.description.abstractWe report a novel 1000°C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V · s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000°C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.892367
dc.sourceScopus
dc.subjectHfLaON
dc.subjectIr3Si
dc.subjectMOSFET
dc.subjectWork function
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2007.892367
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume28
dc.description.issue4
dc.description.page292-294
dc.description.codenEDLED
dc.identifier.isiut000245225300012
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