Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2005.862687
| Title: | High work function IrxSi gates on HfAlON p-MOSFETs | Authors: | Wu, C.H. Yu, D.S. Chin, A. Wang, S.J. Li, M.-F. Zhu, C. Hung, B.F. McAlister, S.P. |
Issue Date: | Feb-2006 | Citation: | Wu, C.H., Yu, D.S., Chin, A., Wang, S.J., Li, M.-F., Zhu, C., Hung, B.F., McAlister, S.P. (2006-02). High work function IrxSi gates on HfAlON p-MOSFETs. IEEE Electron Device Letters 27 (2) : 90-92. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.862687 | Abstract: | We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-nm equivalent oxide thickness. After 950 °C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm2/V·s, and the advantage of being process compatible to the current VLSI fabrication line. © 2006 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82457 | ISSN: | 07413106 | DOI: | 10.1109/LED.2005.862687 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
18
checked on Feb 21, 2020
WEB OF SCIENCETM
Citations
17
checked on Feb 13, 2020
Page view(s)
44
checked on Feb 17, 2020
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.