Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.862687
Title: High work function IrxSi gates on HfAlON p-MOSFETs
Authors: Wu, C.H.
Yu, D.S.
Chin, A.
Wang, S.J.
Li, M.-F. 
Zhu, C. 
Hung, B.F.
McAlister, S.P.
Issue Date: Feb-2006
Citation: Wu, C.H., Yu, D.S., Chin, A., Wang, S.J., Li, M.-F., Zhu, C., Hung, B.F., McAlister, S.P. (2006-02). High work function IrxSi gates on HfAlON p-MOSFETs. IEEE Electron Device Letters 27 (2) : 90-92. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.862687
Abstract: We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-nm equivalent oxide thickness. After 950 °C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm2/V·s, and the advantage of being process compatible to the current VLSI fabrication line. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82457
ISSN: 07413106
DOI: 10.1109/LED.2005.862687
Appears in Collections:Staff Publications

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