Please use this identifier to cite or link to this item:
|Title:||High-k gate stack formation on strained SiGe substrate for MOSFET applications||Authors:||Zhu, C.
|Issue Date:||2007||Citation:||Zhu, C.,Li, M.F.,Huang, J.,Fu, J. (2007). High-k gate stack formation on strained SiGe substrate for MOSFET applications. ECS Transactions 11 (6) : 115-123. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2778370||Abstract:||In this paper, we examine the high-k gate stack formation on strained SiGe for p-channel MOSFET applications by comparing two different surface passivations. Experimental results show that although both surface nitridation and silicon passivation provide good MOS capacitors on SiGe substrates, the devices with ultra-thin Si passivation layer provides higher hole mobility than those with surface nitridation. It is believed that nitrogen incorporation during surface nitridation may degrade hole mobility. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/70479||ISBN:||9781566775724||ISSN:||19385862||DOI:||10.1149/1.2778370|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.