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Title: High-k gate stack formation on strained SiGe substrate for MOSFET applications
Authors: Zhu, C. 
Li, M.F. 
Huang, J.
Fu, J.
Issue Date: 2007
Citation: Zhu, C.,Li, M.F.,Huang, J.,Fu, J. (2007). High-k gate stack formation on strained SiGe substrate for MOSFET applications. ECS Transactions 11 (6) : 115-123. ScholarBank@NUS Repository.
Abstract: In this paper, we examine the high-k gate stack formation on strained SiGe for p-channel MOSFET applications by comparing two different surface passivations. Experimental results show that although both surface nitridation and silicon passivation provide good MOS capacitors on SiGe substrates, the devices with ultra-thin Si passivation layer provides higher hole mobility than those with surface nitridation. It is believed that nitrogen incorporation during surface nitridation may degrade hole mobility. © The Electrochemical Society.
Source Title: ECS Transactions
ISBN: 9781566775724
ISSN: 19385862
DOI: 10.1149/1.2778370
Appears in Collections:Staff Publications

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