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https://doi.org/10.1109/LED.2003.820664
Title: | High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics | Authors: | Ding, S.-J. Hu, H. Lim, H.F. Kim, S.J. Yu, X.F. Zhu, C. Li, M.F. Cho, B.J. Chan, D.S.H. Rustagi, S.C. Yu, M.B. Chin, A. Kwong, D.-L. |
Keywords: | Atomic layer deposition (ALD) HfO2-Al2O3 laminate High-κ Metal-insulator-metal (MIM) capacitor |
Issue Date: | Dec-2003 | Citation: | Ding, S.-J., Hu, H., Lim, H.F., Kim, S.J., Yu, X.F., Zhu, C., Li, M.F., Cho, B.J., Chan, D.S.H., Rustagi, S.C., Yu, M.B., Chin, A., Kwong, D.-L. (2003-12). High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics. IEEE Electron Device Letters 24 (12) : 730-732. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.820664 | Abstract: | For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al 2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10-8 A/cm2 at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O 3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82465 | ISSN: | 07413106 | DOI: | 10.1109/LED.2003.820664 |
Appears in Collections: | Staff Publications |
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