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|Title:||High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics||Authors:||Ding, S.-J.
|Keywords:||Atomic layer deposition (ALD)
Metal-insulator-metal (MIM) capacitor
|Issue Date:||Dec-2003||Citation:||Ding, S.-J., Hu, H., Lim, H.F., Kim, S.J., Yu, X.F., Zhu, C., Li, M.F., Cho, B.J., Chan, D.S.H., Rustagi, S.C., Yu, M.B., Chin, A., Kwong, D.-L. (2003-12). High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics. IEEE Electron Device Letters 24 (12) : 730-732. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.820664||Abstract:||For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al 2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10-8 A/cm2 at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O 3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82465||ISSN:||07413106||DOI:||10.1109/LED.2003.820664|
|Appears in Collections:||Staff Publications|
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