Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.820664
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dc.titleHigh-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics
dc.contributor.authorDing, S.-J.
dc.contributor.authorHu, H.
dc.contributor.authorLim, H.F.
dc.contributor.authorKim, S.J.
dc.contributor.authorYu, X.F.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.F.
dc.contributor.authorCho, B.J.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorRustagi, S.C.
dc.contributor.authorYu, M.B.
dc.contributor.authorChin, A.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:29:43Z
dc.date.available2014-10-07T04:29:43Z
dc.date.issued2003-12
dc.identifier.citationDing, S.-J., Hu, H., Lim, H.F., Kim, S.J., Yu, X.F., Zhu, C., Li, M.F., Cho, B.J., Chan, D.S.H., Rustagi, S.C., Yu, M.B., Chin, A., Kwong, D.-L. (2003-12). High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics. IEEE Electron Device Letters 24 (12) : 730-732. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.820664
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82465
dc.description.abstractFor the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al 2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10-8 A/cm2 at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O 3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.820664
dc.sourceScopus
dc.subjectAtomic layer deposition (ALD)
dc.subjectHfO2-Al2O3 laminate
dc.subjectHigh-κ
dc.subjectMetal-insulator-metal (MIM) capacitor
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2003.820664
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume24
dc.description.issue12
dc.description.page730-732
dc.description.codenEDLED
dc.identifier.isiut000187845800003
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