High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate Dielectrics

Abstract

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al 2O3 laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF/μ m2 from 10 kHz up to 20 GHz, very low leakage current of 3.2 × 10-8 A/cm2 at 3. 3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V2, temperature coefficient of capacitance of 182 ppm/°C, and high breakdown field of ∼6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O 3 laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.