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https://doi.org/10.1063/1.2168227
Title: | High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3 | Authors: | Ding, S.-J. Zhang, M. Chen, W. Zhang, D.W. Wang, L.-K. Wang, X.P. Zhu, C. Li, M.-F. |
Issue Date: | 2006 | Citation: | Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F. (2006). High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3. Applied Physics Letters 88 (4) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168227 | Abstract: | We demonstrate a program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2 HfO2 - Al2 O3 nanolaminate (HAN) Al2 O3. The memory capacitor exhibits a high capacitance density of 4.5 fFμ m2, a large memory window of 1.45 V in the case of +12 V program-12 V erase for 5 ms, nearly symmetrical positive and negative flatband voltages under the program/erase operations with the same magnitudes of voltage and time, and no erase saturation. This is attributed to the fact that the introduction of atomic-layer-deposited high-dielectric-constant HAN Al2 O3 layers increases the electric field across the tunnel oxide and reduces that across the blocking layer, hence, preventing effectively Fowler-Nordheim tunneling current through the blocking layer. Additionally, we find that the HAN is a promising charge storage layer with sufficient trapping centers for electrons and holes. © 2006 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82447 | ISSN: | 00036951 | DOI: | 10.1063/1.2168227 |
Appears in Collections: | Staff Publications |
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