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|Title:||High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3||Authors:||Ding, S.-J.
|Issue Date:||2006||Citation:||Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F. (2006). High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3. Applied Physics Letters 88 (4) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168227||Abstract:||We demonstrate a program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2 HfO2 - Al2 O3 nanolaminate (HAN) Al2 O3. The memory capacitor exhibits a high capacitance density of 4.5 fFμ m2, a large memory window of 1.45 V in the case of +12 V program-12 V erase for 5 ms, nearly symmetrical positive and negative flatband voltages under the program/erase operations with the same magnitudes of voltage and time, and no erase saturation. This is attributed to the fact that the introduction of atomic-layer-deposited high-dielectric-constant HAN Al2 O3 layers increases the electric field across the tunnel oxide and reduces that across the blocking layer, hence, preventing effectively Fowler-Nordheim tunneling current through the blocking layer. Additionally, we find that the HAN is a promising charge storage layer with sufficient trapping centers for electrons and holes. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82447||ISSN:||00036951||DOI:||10.1063/1.2168227|
|Appears in Collections:||Staff Publications|
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