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|Title:||Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs||Authors:||Low, T.
|Issue Date:||2004||Citation:||Low, T.,Li, M.F.,Fan, W.J.,Ng, S.T.,Yeo, Y.-C.,Zhu, C.,Chin, A.,Chan, L.,Kwong, D.L. (2004). Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 151-154. ScholarBank@NUS Repository.||Abstract:||Ultra-thin body (UTB) SOI MOSFET is promising for sub-50 nm CMOS technologies . However, recent experimental finding  suggests the need for serious reconsiderations of its long-term scaling capability into the sub-10 nm body thickness (T BODY) regime. Two new phenomena attributed to surface roughness (SR) are identified ; they are enhanced threshold voltage (V TH) shifts and drastic degradation of mobility with a T BODY dependence [2,3]. In this work, we detail a study of these two phenomena in UTB MOSFETs with sub 10 nm T BODY Si and Ge channels. Firstly, the phenomena of enhanced V TH shifts is modeled by accounting for the fluctuation of quantized energy levels due to SR up to second order approximation. Good corroboration with experimental results  is obtained. Our model is then applied to examine the impact of enhanced V TH shifts on metal gate workfunction requirements. Secondly, we modeled the SR-limited electron and hole mobility and discuss their impact on the choice of surface orientations. Mobility anisotropy are also examined for the various surface orientations. ©2004 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/83819||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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