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https://scholarbank.nus.edu.sg/handle/10635/83819
DC Field | Value | |
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dc.title | Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs | |
dc.contributor.author | Low, T. | |
dc.contributor.author | Li, M.F. | |
dc.contributor.author | Fan, W.J. | |
dc.contributor.author | Ng, S.T. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Chan, L. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-10-07T04:45:32Z | |
dc.date.available | 2014-10-07T04:45:32Z | |
dc.date.issued | 2004 | |
dc.identifier.citation | Low, T.,Li, M.F.,Fan, W.J.,Ng, S.T.,Yeo, Y.-C.,Zhu, C.,Chin, A.,Chan, L.,Kwong, D.L. (2004). Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 151-154. ScholarBank@NUS Repository. | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83819 | |
dc.description.abstract | Ultra-thin body (UTB) SOI MOSFET is promising for sub-50 nm CMOS technologies [1]. However, recent experimental finding [2] suggests the need for serious reconsiderations of its long-term scaling capability into the sub-10 nm body thickness (T BODY) regime. Two new phenomena attributed to surface roughness (SR) are identified [2]; they are enhanced threshold voltage (V TH) shifts and drastic degradation of mobility with a T BODY dependence [2,3]. In this work, we detail a study of these two phenomena in UTB MOSFETs with sub 10 nm T BODY Si and Ge channels. Firstly, the phenomena of enhanced V TH shifts is modeled by accounting for the fluctuation of quantized energy levels due to SR up to second order approximation. Good corroboration with experimental results [2] is obtained. Our model is then applied to examine the impact of enhanced V TH shifts on metal gate workfunction requirements. Secondly, we modeled the SR-limited electron and hole mobility and discuss their impact on the choice of surface orientations. Mobility anisotropy are also examined for the various surface orientations. ©2004 IEEE. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.page | 151-154 | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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