Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83819
Title: Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs
Authors: Low, T.
Li, M.F. 
Fan, W.J.
Ng, S.T.
Yeo, Y.-C. 
Zhu, C. 
Chin, A. 
Chan, L.
Kwong, D.L.
Issue Date: 2004
Source: Low, T.,Li, M.F.,Fan, W.J.,Ng, S.T.,Yeo, Y.-C.,Zhu, C.,Chin, A.,Chan, L.,Kwong, D.L. (2004). Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 151-154. ScholarBank@NUS Repository.
Abstract: Ultra-thin body (UTB) SOI MOSFET is promising for sub-50 nm CMOS technologies [1]. However, recent experimental finding [2] suggests the need for serious reconsiderations of its long-term scaling capability into the sub-10 nm body thickness (T BODY) regime. Two new phenomena attributed to surface roughness (SR) are identified [2]; they are enhanced threshold voltage (V TH) shifts and drastic degradation of mobility with a T BODY dependence [2,3]. In this work, we detail a study of these two phenomena in UTB MOSFETs with sub 10 nm T BODY Si and Ge channels. Firstly, the phenomena of enhanced V TH shifts is modeled by accounting for the fluctuation of quantized energy levels due to SR up to second order approximation. Good corroboration with experimental results [2] is obtained. Our model is then applied to examine the impact of enhanced V TH shifts on metal gate workfunction requirements. Secondly, we modeled the SR-limited electron and hole mobility and discuss their impact on the choice of surface orientations. Mobility anisotropy are also examined for the various surface orientations. ©2004 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83819
ISSN: 01631918
Appears in Collections:Staff Publications

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