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|Title:||High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications||Authors:||Kim, S.-J.
|Issue Date:||2005||Citation:||Kim, S.-J.,Cho, B.J.,Yu, M.B.,Li, M.-F.,Xiong, Y.-Z.,Zhu, C.,Chin, A.,Kwong, D.-L. (2005). High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 56-57. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469210||Abstract:||MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83776||ISSN:||07431562||DOI:||10.1109/.2005.1469210|
|Appears in Collections:||Staff Publications|
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