Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2008.4796703
Title: High mobility high-k/Ge pMOSFETs with 1 nm EOT-new concept on interface engineering and interface characterization
Authors: Xie, R.
Phung, T.H.
He, W. 
Sun, Z.
Yu, M.
Cheng, Z.
Zhu, C. 
Issue Date: 2008
Citation: Xie, R.,Phung, T.H.,He, W.,Sun, Z.,Yu, M.,Cheng, Z.,Zhu, C. (2008). High mobility high-k/Ge pMOSFETs with 1 nm EOT-new concept on interface engineering and interface characterization. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2008.4796703
Abstract: High-k/Ge interfaces are significantly improved through a new interface engineering scheme of using both effective pre-gate surface GeO 2 passivation and post gate dielectric (post-gate) treatment incorporating fluorine (F) into high-k/Ge gate stack. Minimum density of interface states (D it) of 2 x 10 11 cm -2eV -1 is obtained for Ge MOS capacitors. Hole mobility up to 396 cm 2/Vs is achieved for Ge pMOSFETs with EOT ∼10 Å and gate leakage current density less than 10 -3 A/cm 2 at V ± 1 V. Best drain current to date of 37.8 μA/|im at V g-V t = V d= -1.2V is presented for an L g of 10 μm. Variable rise and fall time charge pumping (CP) method is used to investigate Ge interface property and a significant D it reduction in both upper and lower half of bandgap is observed with F incorporation.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83781
ISBN: 9781424423781
ISSN: 01631918
DOI: 10.1109/IEDM.2008.4796703
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