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https://scholarbank.nus.edu.sg/handle/10635/83777
Title: | High density RF MIM capacitors using high-κ AlTaOx dielectrics | Authors: | Huang, C.H. Yang, M.Y. Chin, A. Zhu, C. Li, M.F. Kwong, D.-L. |
Issue Date: | 2003 | Citation: | Huang, C.H.,Yang, M.Y.,Chin, A.,Zhu, C.,Li, M.F.,Kwong, D.-L. (2003). High density RF MIM capacitors using high-κ AlTaOx dielectrics. IEEE MTT-S International Microwave Symposium Digest 1 : 507-510. ScholarBank@NUS Repository. | Abstract: | Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime. | Source Title: | IEEE MTT-S International Microwave Symposium Digest | URI: | http://scholarbank.nus.edu.sg/handle/10635/83777 | ISSN: | 0149645X |
Appears in Collections: | Staff Publications |
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