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|Title:||High density RF MIM capacitors using high-κ AlTaOx dielectrics||Authors:||Huang, C.H.
|Issue Date:||2003||Citation:||Huang, C.H.,Yang, M.Y.,Chin, A.,Zhu, C.,Li, M.F.,Kwong, D.-L. (2003). High density RF MIM capacitors using high-κ AlTaOx dielectrics. IEEE MTT-S International Microwave Symposium Digest 1 : 507-510. ScholarBank@NUS Repository.||Abstract:||Radiofrequency (RF) metal-insulator-metal (MIM) capacitors based on high-permittivity AlTaOx dielectrics were presented. A high capacitance density of 10 fF/νm2 and small capacitance reduction of 5% was achieved with the RF capacitors. The AlTaOx MIM capacitor technology was found to be suitable for high speed precision circuits operating in the RF regime.||Source Title:||IEEE MTT-S International Microwave Symposium Digest||URI:||http://scholarbank.nus.edu.sg/handle/10635/83777||ISSN:||0149645X|
|Appears in Collections:||Staff Publications|
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