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https://doi.org/10.1109/LED.2003.812572
| Title: | High-density MIM capacitors using AlTaOx dielectrics | Authors: | Yang, M.Y. Huang, C.H. Chin, A. Zhu, C. Li, M.F. Kwong, D.-L. |
Keywords: | Capacitor Dielectric constant Frequency dependence High κ MIM RF |
Issue Date: | May-2003 | Citation: | Yang, M.Y., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L. (2003-05). High-density MIM capacitors using AlTaOx dielectrics. IEEE Electron Device Letters 24 (5) : 306-308. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812572 | Abstract: | The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm2 using high-κ AlTaOx fabricated at 400°C. In addition, small voltage dependence of capacitance of < 600 ppm (quadratic voltage coefficient of only 130 ppm/V2) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-κ AlTaOx MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82459 | ISSN: | 07413106 | DOI: | 10.1109/LED.2003.812572 |
| Appears in Collections: | Staff Publications |
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