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|Title:||High-density MIM capacitors using AlTaOx dielectrics||Authors:||Yang, M.Y.
|Issue Date:||May-2003||Citation:||Yang, M.Y., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L. (2003-05). High-density MIM capacitors using AlTaOx dielectrics. IEEE Electron Device Letters 24 (5) : 306-308. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812572||Abstract:||The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm2 using high-κ AlTaOx fabricated at 400°C. In addition, small voltage dependence of capacitance of < 600 ppm (quadratic voltage coefficient of only 130 ppm/V2) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-κ AlTaOx MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82459||ISSN:||07413106||DOI:||10.1109/LED.2003.812572|
|Appears in Collections:||Staff Publications|
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