Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.812572
Title: High-density MIM capacitors using AlTaOx dielectrics
Authors: Yang, M.Y.
Huang, C.H.
Chin, A.
Zhu, C. 
Li, M.F. 
Kwong, D.-L.
Keywords: Capacitor
Dielectric constant
Frequency dependence
High κ
MIM
RF
Issue Date: May-2003
Citation: Yang, M.Y., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L. (2003-05). High-density MIM capacitors using AlTaOx dielectrics. IEEE Electron Device Letters 24 (5) : 306-308. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812572
Abstract: The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm2 using high-κ AlTaOx fabricated at 400°C. In addition, small voltage dependence of capacitance of < 600 ppm (quadratic voltage coefficient of only 130 ppm/V2) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-κ AlTaOx MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82459
ISSN: 07413106
DOI: 10.1109/LED.2003.812572
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