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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.812572
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dc.titleHigh-density MIM capacitors using AlTaOx dielectrics
dc.contributor.authorYang, M.Y.
dc.contributor.authorHuang, C.H.
dc.contributor.authorChin, A.
dc.contributor.authorZhu, C.
dc.contributor.authorLi, M.F.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:29:38Z
dc.date.available2014-10-07T04:29:38Z
dc.date.issued2003-05
dc.identifier.citationYang, M.Y., Huang, C.H., Chin, A., Zhu, C., Li, M.F., Kwong, D.-L. (2003-05). High-density MIM capacitors using AlTaOx dielectrics. IEEE Electron Device Letters 24 (5) : 306-308. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812572
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82459
dc.description.abstractThe authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm2 using high-κ AlTaOx fabricated at 400°C. In addition, small voltage dependence of capacitance of < 600 ppm (quadratic voltage coefficient of only 130 ppm/V2) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-κ AlTaOx MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.812572
dc.sourceScopus
dc.subjectCapacitor
dc.subjectDielectric constant
dc.subjectFrequency dependence
dc.subjectHigh κ
dc.subjectMIM
dc.subjectRF
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2003.812572
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume24
dc.description.issue5
dc.description.page306-308
dc.description.codenEDLED
dc.identifier.isiut000184064600007
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