Please use this identifier to cite or link to this item:
|Title:||High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process||Authors:||Zhang, Q.C.
|Issue Date:||2007||Citation:||Zhang, Q.C.,Huang, J.D.,Wu, N.,Chen, G.X.,Hong, M.H.,Bera, L.K.,Zhu, C. (2007). High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 146-148. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2006.306122||Abstract:||Gate-first self-aligned Ge nMOSFET and pMOSFET with metal gate and CVD HfO 2 have been successfully fabricated, using a novel laser thermal process (LTP) S/D activation. Compared with conventional rapid thermal annealing (RTA) activation, LTP provides smaller S/D series resistance with shallower junction depth while maintaining good gate stack integrity. Much improved drive current is obtained on Ge nMOSFET. A high hole mobility (1.9X of universal Si/SiO 2) is also achieved on Ge pMOSFET. © 2006 IEEE.||Source Title:||ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83784||ISBN:||1424401615||DOI:||10.1109/ICSICT.2006.306122|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.